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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3794 2SC3794A DESCRIPTION With TO-220Fa package High VCBO High speed switching Low collector saturation voltage APPLICATIONS For high speed switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25ae ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO VEBO IC ICM IB INC Collector-emitter voltage E SEM ANG H 2SC3794 2SC3794A OND IC CONDITIONS TOR UC VALUE 800 900 500 8 1.5 3.0 0.5 UNIT Open emitter V Open base Open collector V V A A A Emitter-base voltage Collector current (DC) Collector current-Peak Base current TC=25ae PC Collector power dissipation Ta=25ae Tj Tstg Junction temperature Storage temperature 25 W 2 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage 2SC3794 2SC3794A CONDITIONS IC=0.2A , L=25mH IC=1A; IB=0.2A IC=1A; IB=0.2A VCB=800V; IE=0 2SC3794 2SC3794A SYMBOL VCEO(SUS) VCEsat VBEsat MIN 500 TYP. MAX UNIT V 1.0 1.5 V V ICBO Collector cut-off current 0.1 VCB=900V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=1A ; VCE=5V IC=0.2A ; VCE=10V 15 8 0.1 mA IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Transition frequency mA Switching times ton Fall time Turn-on time ts INC Storage time E SEM ANG H 2SC3794 2SC3794A 2SC3794 2SC3794A OND IC TOR UC 8 1.0 1.2 3.0 1.0 MHz |I s IC=1A; IB1=- IB2=0.2A VCC=200V |I s tf |I 1.2 s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3794 2SC3794A CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.15 mm) 3 |
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